GaN drive circuit
Web-based research report on trends in "technology and companies" from patent information.
■ A Dynamic Map that Provides an Overview of Technology and Companies This dynamic map is an electronic patent investigation report that allows users to view the results of patent information related to the title theme technology, divided into two axes: the technology side categorized by technical classification and the company side featuring the top 10 applicants. ■ Target Technology Gallium Nitride (GaN) power semiconductor devices are expected to be the next-generation power semiconductor devices. Compared to the currently mainstream Silicon (Si) power semiconductor devices, they offer high voltage resistance, fast switching, and high-temperature operation. However, there are challenges such as the normally-on characteristic and low gate breakdown voltage, making the driving circuit crucial for maximizing the performance of Gallium Nitride (GaN) power semiconductor devices. This report investigates recent patent information regarding the driving circuits for Gallium Nitride (GaN) power semiconductor devices. ■ Technical Classification ◇ High-speed operation ◇ False point arc ◇ Switching loss ◇ Overvoltage protection ◇ Overcurrent protection ◇ Noise countermeasures ◇ Normally-off conversion ◇ Others ◇ Reference information
